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| ON Semiconductort Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. MJL21193* NPN MJL21194* *ON Semiconductor Preferred Device PNP * Total Harmonic Distortion Characterized * High DC Current Gain - * * hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current -- Continuous Collector Current -- Peak (1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symb ol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 200 1.43 -65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/C C CASE 340G-02 TO-3PBL THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.7 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5.0 s, Duty Cycle 10%. VCEO(sus) ICEO 250 -- -- -- -- 100 Vdc Adc (continued) Symbol Min Typical Max Unit Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 March, 2002 - Rev. 3 Publication Order Number: MJL21193/D MJL21193 MJL21194 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 80 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2% THD hFE unmatched hFE matched fT Cob -- -- 4 -- 0.8 0.08 -- -- -- -- -- 500 MHz pF % hFE 25 8 VBE(on) VCE(sat) -- -- -- -- 1.4 4 -- -- -- -- 75 -- 2.2 Vdc Vdc IS/b 4.0 2.25 -- -- -- -- Adc IEBO ICEX -- -- -- -- 100 100 Adc Adc Symbol Min Typical Max Unit PNP MJL21193 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) 10 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) VCE = 10 V 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.1 TJ = 25C ftest = 1 MHz NPN MJL21194 10 V 5V VCE = 5 V 1.0 IC COLLECTOR CURRENT (AMPS) 10 Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 MJL21193 MJL21194 TYPICAL CHARACTERISTICS PNP MJL21193 1000 1000 NPN MJL21194 hFE , DC CURRENT GAIN TJ = 100C 100 25C -25C VCE = 20 V 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 hFE , DC CURRENT GAIN TJ = 100C 25C 100 -25C VCE = 20 V 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJL21193 1000 1000 NPN MJL21194 hFE , DC CURRENT GAIN TJ = 100C 25C 100 -25C hFE , DC CURRENT GAIN TJ = 100C 25C 100 -25C VCE = 5 V 10 0.1 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP MJL21193 30 I C, COLLECTOR CURRENT (A) I C, COLLECTOR CURRENT (A) 25 20 15 10 5.0 TJ = 25C 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 0 1.5 A IB = 2 A 1A 0.5 A 35 30 25 20 15 10 5.0 NPN MJL21194 IB = 2 A 1.5 A 1A 0.5 A TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 Fi 7T i lO t t Ch t i ti http://onsemi.com 3 Fi 8T i lO t t Ch t i ti MJL21193 MJL21194 TYPICAL CHARACTERISTICS PNP MJL21193 3.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 0.1 VBE(sat) VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 TJ = 25C IC/IB = 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 VBE(sat) TJ = 25C IC/IB = 10 NPN MJL21194 Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJL21193 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 TJ = 25C 10 TJ = 25C NPN MJL21194 VCE = 20 V (SOLID) 1.0 VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) VCE = 5 V (DASHED) 0.1 0.1 1.0 10 100 0.1 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base-Emitter Voltage Figure 12. Typical Base-Emitter Voltage 100 IC, COLLECTOR CURRENT (AMPS) 1 SEC 10 1.0 0.1 1.0 10 100 1000 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area http://onsemi.com 4 MJL21193 MJL21194 10000 TC = 25C C, CAPACITANCE (pF) Cib C, CAPACITANCE (pF) 10000 TC = 25C Cib 1000 Cob f(test) = 1 MHz) 100 0.1 1.0 10 1000 Cob 1.0 10 100 100 100 0.1 f(test) = 1 MHz) VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJL21193 Typical Capacitance Figure 15. MJL21194 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 DUT 0.5 0.5 8.0 DUT -50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5 MJL21193 MJL21194 PACKAGE DIMENSIONS TO-3PBL (TO-264) CASE 340G-02 ISSUE H SCALE 1:2 0.25 (0.010) -B- -Q- C U N A R -Y- P K 1 2 3 M TB M -T- E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q R U W MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H YQ S http://onsemi.com 6 MJL21193 MJL21194 Notes http://onsemi.com 7 MJL21193 MJL21194 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJL21193/D |
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